Document Type

Article

Publication Date

7-2-2014

Publication Title

Physical Review B - Condensed Matter and Materials Physics

Abstract

We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side peaks, revealing a zero-field valley splitting between 0.28 to 0.34 meV. A zero-bias conductance peak for nonzero magnetic field, a phenomenon consistent with valley nonconservation in tunneling, is observed in two samples.

DOI

10.1103/PhysRevB.90.035302

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