Author ORCID Identifier

https://orcid.org/0000-0001-6268-117X

Date of Award

Winter 2024

Document Type

Thesis (Ph.D.)

Department or Program

Engineering Sciences

First Advisor

William Scheideler

Abstract

Widegap metal oxides are critical semiconducting materials in solar power generation, transparent electronics and displays. Ultrathin versions of these materials are poised to be at the forefront of next generation technology due to their high transparency, flexibility, and the capacity to advantageously use backchannel sensitivity and quantum confinement. Liquid metal printing is a novel deposition technique that fundamentally yields ultrathin oxide materials by exfoliating the self-limited oxide that exists on molten metals at low temperatures. Our work involves the invention of novel liquid metal printing techniques to deposit semiconducting 2D metal oxides with precise electrostatic properties. We investigate the electronic behavior of single and multilayer stacks of InOx, GaOx and ITO materials primarily by integrating them into switching devices. Their optoelectronic and morphological properties are characterized through the use of UV-Vis, XPS, XRD and TEM in order to explain the link between their physical and electronic structure. 2D liquid metal printed oxides have demonstrated a number of advantageous traits such as high mobility and transparency, beneficial responses to heterojunction stacking, and flexibility. The formation of the oxide skin is also examined through the lens of the relevant theory. We generate models from the experimental data and governing oxidation equations in order to predict the synthesis parameters of desirable materials. The overarching aim of our work in the field of liquid metal printing is to discover fundamental characteristics of 2D oxides which could lead to the development of high-performance flexible transparent electronic materials and low-cost, rapid production of metal oxide switching devices.

Original Citation

Hamlin, A. B., Ye, Y., Huddy, J. E., Rahman, M. S. & Scheideler, W. J. Engineering High-Mobility 2D InOx Semiconductors Printed From Liquid Metals. MRS Meet. Abstr. EQ20.01.04 (2021).

Scheideler, W. J., Hamlin, A. B., Ye, Y., Huddy, J. E. & Rahman, M. S. Liquid-Metal-Printed Ultrathin Channel In2O3 Transistors for Large Area Transparent Electronics. in 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 176–178 (2022). doi:10.1109/EDTM53872.2022.9797927.

Hamlin, A. B., Ye, Y., Huddy, J. E., Rahman, M. S. & Scheideler, W. J. 2D transistors rapidly printed from the crystalline oxide skin of molten indium. Npj 2D Mater. Appl. 6, 1–8 (2022).

Hamlin, A. B., Ye, Y., Huddy, J. E. & Scheideler, W. J. Modulation Doped 2D InOx/GaOx Heterostructure TFTs Via Liquid Metal Printing. ECS Meet. Abstr. MA2022-01, 1326 (2022).

Ye, Y.*, Hamlin, A. B.*, Huddy, J. E., Rahman, M. S. & Scheideler, W. J. Continuous Liquid Metal Printed 2D Transparent Conductive Oxide Superlattices. Adv. Funct. Mater. 32, 2204235 (2022).

Hamlin, A. B., Ye, Y., Huddy, J. E. & Scheideler, W. J. Modulation Doped 2D InOx/GaOx Heterostructure TFTs Via Liquid Metal Printing. ECS Meet. Abstr. MA2022-01, 1326 (2022).

Hamlin, A. B., Agnew, S., Tiwari, A. P. & Scheideler, W. J. Continuous Liquid Metal Printing of High Mobility 2D Oxide Heterostructure Transistors. MRS Meet. Abstr. EQ06.06.01 (2022).

Scheideler, W. J., Hamlin, A. B., Ye, Y. & Agnew, S. Continuous Liquid Metal Printing for Rapid Metal Oxide TFT Integration. in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 1–3 (2023). doi:10.1109/EDTM55494.2023.10102933.

Hamlin, A. B., Agnew, S. A., Bonner, J. C., Hsu, J. W. P. & Scheideler, W. J. Heterojunction Transistors Printed via Instantaneous Oxidation of Liquid Metals. Nano Lett. 23, 2544–2550 (2023).

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