Document Type
Article
Publication Date
12-11-2019
Publication Title
Sensors
Department
Thayer School of Engineering
Abstract
This work fits the measured in-pixel source-follower noise in a CMOS Quanta Image Sensor (QIS) prototype chip using physics-based 1/f noise models, rather than the widely-used fitting model for analog designers. This paper discusses the different origins of 1/f noise in QIS devices and includes correlated double sampling (CDS). The modelling results based on the Hooge mobility fluctuation, which uses one adjustable parameter, match the experimental measurements, including the variation in noise from room temperature to –70 °C. This work provides useful information for the implementation of QIS in scientific applications and suggests that even lower read noise is attainable by further cooling and may be applicable to other CMOS analog circuits and CMOS image sensors.
DOI
10.3390/s19245459
Original Citation
Deng, W.; Fossum, E.R. 1/f Noise Modelling and Characterization for CMOS Quanta Image Sensors. Sensors 2019, 19, 5459. https://doi.org/10.3390/s19245459
Dartmouth Digital Commons Citation
Deng, Wei and Fossum, Eric R., "1/fNoise Modelling and Characterization for CMOS Quanta Image Sensors" (2019). Dartmouth Scholarship. 4090.
https://digitalcommons.dartmouth.edu/facoa/4090
