Document Type
Article
Publication Date
11-1-2021
Publication Title
Sensors
Department
Thayer School of Engineering
Abstract
Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection.
DOI
10.3390/s21227566
Original Citation
Anagnost, K.M.; Lee, E.; Wang, Z.; Liu, J.; Fossum, E.R. Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer. Sensors 2021, 21, 7566. https://doi.org/10.3390/s21227566
Dartmouth Digital Commons Citation
Anagnost, Kaitlin M.; Lee, Eldred; Wang, Zhehui; Liu, Jifeng; and Fossum, Eric R., "Simulating 50 kev x-ray photon detection in silicon with a down-conversion layer" (2021). Dartmouth Scholarship. 4205.
https://digitalcommons.dartmouth.edu/facoa/4205
